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[德语词汇] 德语词汇学习:电子类常用名词缩写(2)

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发表于 2012-8-16 22:32:39 | 显示全部楼层 |阅读模式
  GTO(Sate turn off thruster) 门极可关断晶体管5 E$ G  ]5 h- F5 `. b$ \6 k; u
  HART(highway addressable remote transducer) 可寻址远程传感器数据公路
! i; q8 L8 _# R8 Z9 ~: D1 l: ?  HCMOS(high density COMS) 高密度互补金属氧化物半导体(器件)
; F+ I" _. }7 h6 b+ G  HF(high frequency) 高频3 K! f; A# u* [& o+ }1 j! V+ J0 J) k
  HTL(high threshold logic) 高阈值逻辑电路0 ]  F9 ~4 [  o4 ^' G
  HTS(heat temperature sensor) 热温度传感器
6 i! h8 [$ H- ]. O" C5 u2 m  IC(integrated circuit) 集成电路
  A) p; |$ C! d7 p5 c' D+ l$ ]  ID(international data) 国际数据
- L; d# `9 N' O" b  IGBT(insulated gate bipolar transistor) 绝缘栅双极型晶体管! s: [0 W4 x( i6 ]
  IGFET(insulated gate field effect transistor) 绝缘栅场效应晶体管" V! H, w+ {9 K, C! B
  I/O(input/output) 输入/输出9 @4 N. Z- Q5 f& J! ?* Z8 I
  I/V(current to voltage convertor) 电流-电压变换器$ M0 n# i# E; {4 p' A
  IPM(incidental phase modulation) 附带的相位调制7 X- N3 x0 ^" ^9 _# h9 r' J, z
  IPM(intelligent power module) 智能功率模块
$ J: w* X1 @; h& c4 z  IR(infrared radiation) 红外辐射
2 j3 q( n2 x: R8 J: l/ l  IRQ(interrupt request) 中断请求
; T. v. C0 }2 s& S7 x" r" J8 B  JFET(junction field effect transistor) 结型场效应晶体管
2 X) o5 x. e: b! f  t( \8 f/ y  LAS(light activated switch)光敏开关) b4 E! A  X8 p7 W
  LASCS(light activated silicon controlled switch) 光控可控硅开关3 `! {5 }7 F! k8 O" u1 A7 I$ X
  LCD(liquid crystal display) 液晶显示器, ]" s3 |- F& w3 k* N# l1 Q
  LDR(light dependent resistor) 光敏电阻
4 }3 P7 i6 a7 }7 f% B  LED(light emitting diode) 发光二极管
3 h- {; [+ k; q  LRC(longitudinal redundancy check) 纵向冗余(码)校验( |# l8 ~' V3 D4 d
  LSB(least significant bit) 最低有效位- z! I0 S3 B3 g; t3 _8 O5 P, o1 [
  LSI(1arge scale integration) 大规模集成电路/ m  `  A9 F1 k
  M(motor) 电动机
0 q  b; i+ N" |. q  |1 B  MCT(MOS controlled gyrator) 场控晶闸管
( k! @5 j+ s1 b1 L& f$ P# ?  g  MIC(microphone) 话筒,微音器,麦克风8 ?7 q4 X; ~, C5 _- S
  min(minute) 分1 |% k$ q- x0 N5 ]
  MOS(metal oxide semiconductor)金属氧化物半导体- W* h9 o- z8 m4 @
  MOSFET(metal oxide semiconductor FET) 金属氧化物半导体场效应晶体管
$ u( G& w: `) Y0 l  N(negative) 负! |; {, t9 l: N% b, t0 C
  NMOS(N-channel metal oxide semiconductor FET) N沟道MOSFET) V' a& O1 X! N& M+ C
  NTC(negative temperature coefficient) 负温度系数
9 P6 I2 j; P8 e" s8 p) A7 ?  OC(over current) 过电流
8 z, D0 @: ~3 o( U+ o. g  OCB(overload circuit breaker) 过载断路器2 f; N) C1 P( Q. o& o
  OCS(optical communication system) 光通讯系统
1 C& A8 d' @* j. P# u% b  OR(type of logic circuit) 或逻辑电路
6 I/ D! H. g; q  OV(over voltage) 过电压
0 a9 k! \( T; x! y9 w9 }  P(pressure) 压力; a; Z  u1 Y9 \4 X4 x; l0 d
  FAM(pulse amplitude modulation) 脉冲幅度调制
8 Q# p! o, l# ]  PC(pulse code) 脉冲码; Y# `% q& i. P, C
  PCM(pulse code modulation) 脉冲编码调制
4 p. e( l3 O3 a+ Q  PDM(pulse duration modulation) 脉冲宽度调制2 f- i' |' P; W$ V9 ], B
  PF(power factor) 功率因数" M! {! A1 t+ `( f) W1 u
  PFM(pulse frequency modulation) 脉冲频率调制
, @7 K# Z9 s/ ]) v( x  PG(pulse generator) 脉冲发生器" o. D6 k" Q$ r9 G) r' L2 v1 U6 `
  PGM(programmable) 编程信号
7 K% @8 F4 n- L6 E  PI(proportional-integral(controller)) 比例积分(控制器)
$ D6 y8 B4 A, U  PID(proportional-integral-differential(controller))比例积分微分(控制器)8 y  l' k1 a" s" v5 L0 \
  PIN(positive intrinsic-negative) 光电二极管% i9 F" O7 K+ ^% G7 o5 i6 T5 R( q4 I* j
  PIO(parallel input output) 并行输入输出
3 S: v; d% f+ o! ~" o- f  PLD(phase-locked detector) 同相检波
# h& F0 O: ~/ d  PLD(phase-locked discriminator) 锁相解调器+ [6 ]8 ~( I) K$ {" c
  PLL(phase-locked loop) 锁相环路
7 H# z3 ^8 {: @, N( ~# f3 W) ~0 q' v  PMOS(P-channel metal oxide semiconductor FET) P沟道MOSFET
# E) {5 s- i4 ?  P-P(peak-to-peak) 峰--峰
2 p$ z5 {. m" S& Y9 ]  \  PPM(pulse phase modulation) 脉冲相位洲制* G" W2 ~3 x7 Y/ c. u9 Y
  PRD(piezoelectric radiation detector) 热电辐射控测器
- l; X& f- ?  t9 f8 q9 x- d  PROM(programmable read only memory) 可编只读程存储器6 z) `0 S* M8 i* `
  PRT(platinum resistance thermometer) 铂电阻温度计9 g0 \# h- q0 N
  PRT(pulse recurrent time) 脉冲周期时间) N% l6 t' z$ ~. h, R: p
  PUT(programmable unijunction transistor) 可编程单结晶体管; j6 }2 Y  z$ Y0 D- Q# j
  PWM(pulse width modulation) 脉宽调制* B7 u( d9 t/ c: u1 w
  R(resistance,resistor) 电阻,电阻器
1 O, Z9 O3 l: F( o) y  RAM(random access memory) 随机存储器
; M. c( I. Z- L- g- A1 _- Q# Z' b  RCT(reverse conducting thyristor) 逆导晶闸管
  p) N* J) J- G/ \+ s; ?8 o& h; P  REF(reference) 参考,基准
9 G3 v# X% l! @& o+ ?2 E  REV(reverse) 反转
5 @( d) M  d/ J* Q0 |0 T- h, K  Y7 y  R/F(radio frequency) 射频9 s8 i- g! p3 u' X1 N
  RGB(red/green/blue) 红绿蓝
& m, Q* t& f2 M' S) y8 a  ROM(read only memory) 只读存储器/ ^) A0 [4 T$ f
  RP(resistance potentiometer) 电位器$ |1 A6 U  _9 ]" W7 u3 w
  RST(reset) 复位信号. @$ g* y) c1 O- T0 M1 S$ r$ W
  RT(resistor with inherent variability dependent) 热敏电阻
) e5 Y' \6 W" m/ c, m3 ?7 p  RTD(resistance temperature detector) 电阻温度传感器; z  q8 ~$ l7 s" O+ B
  RTL(resistor transistor logic) 电阻晶体管逻辑(电路)
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