2012年新托福考试加分词辅导（17）
# S6 [; U2 l1 k! Ievolvent 尔, g4 N! N! B# b- I+ u
exa (E)精确度, P9 l1 ?+ X7 J& ^! ]7 G+ A
exactitude (exactness)禁止门
! r. \7 D, C1 V+ Xexcept gate 最佳能见度
9 Q5 Y" _& K2 y7 Kexceptional visibility 过剩吸收
( s+ ]. H" [" \excess absorption 过剩电子
7 u" k7 l$ R8 m' d) |, J$ Mexcess electron 过剩之电子
) S1 _, [. c- Yexcess electron excess fraction 过剩部分 f5 a8 [7 J, }' P, {5 B
excess in deviation 过偏量
( ~1 G/ Q: B' n2 ?- S8 ]excess noise 过量噪声1 G5 n1 i2 a% R
excess photon noise 过量光子& N4 {: Z7 Z+ v) _; J
excess population 过剩粒子数. v* Y3 |# {& z. w! p9 N1 V& X9 f
excess-three-code 余三代码3 D4 p2 j5 Z! ^8 p9 ?
exchange 交换器
. ]8 F N$ D: F# `, rexchange-coupled ion pair 交换耦合离子对7 Z+ o; `" g: h" @9 H' N% q
Excicon 固态
4 \* h4 w C* Y3 }' [X 射线变像管
0 y+ Q y$ }9 t7 I* ~excimer 准分子雷射
# O5 f& F; s: U4 qexcimer laser 激元激光器
, V$ _/ g( i! f( E( x8 K0 fexcimer laser medical systems 准分子雷射医疗系统
; W& S: e8 b) y2 i* |% q0 @excimer laser processing equipment for chemical vapor deposition (CVD)准分子雷- H7 @( c* \1 a& l9 I* ~. X, Y
excimer laser processing equipment for wafer stepper 准分子雷射(缩小投影曝光设5 X! X( E( j/ H& ~) F2 k
excimer laser procossing equipment for micromaching 准分子雷射加工机(微机电/ ^6 x# ~- B; o
excimer lasers 准分子雷射
% m3 u' x* M7 i! @2 G/ yexciplex 复合受激态www.Examw.com
% d6 v4 \. L% ^exciplex dye laser 复合受激态染料激光器) w% z7 ~& ^( Q9 ?, K) W
excircle 外圆0 x# [6 z0 ~4 y! d' ~9 T2 B7 s6 Y
excitabiltiy 可激发性3 l) O' C- H+ ]- k% H9 M9 T, S2 k
excitatino level 激发级$ h7 G" j( M% v$ I; f
excitation 激发，激励
# j) p8 U3 @/ k) ~3 ?excitation cross-section 激发截面
3 _/ Z$ d0 U; |1 V' F, Pexcitation curve 激发曲线
% M2 K0 Z7 T! A9 S0 i# Lexcitation electron 激发电子
2 H5 {) S1 \' l# |3 h2 E7 Vexcitation energy transfer 激发传递( f" H5 ~9 E- E5 G/ |; C6 @; v
excitation frequency 激发频率 |
发表于 2012-8-14 22:56:05
