2012年新托福考试加分词辅导（17）
0 ~" o, p; ] P" k# e! j6 ?evolvent 尔4 S2 Z- U. \8 C5 W1 X1 _" l8 g
exa (E)精确度
$ C3 Y: y% d& Zexactitude (exactness)禁止门
% F: A1 a% }. n/ D: k$ Rexcept gate 最佳能见度: D7 X" G" ^6 y0 I1 A& S3 z% l# D
exceptional visibility 过剩吸收% L' [8 V# a$ H, j' @# U
excess absorption 过剩电子
1 a& M- [* Z h$ n) E. f* j5 }excess electron 过剩之电子" ]/ q# Z# T5 q1 D6 n0 c" |7 E
excess electron excess fraction 过剩部分, u( M% J7 n( \' {5 `
excess in deviation 过偏量
+ b# Y8 l7 q( F* u ?1 Y3 X5 Dexcess noise 过量噪声* {! z! E9 z4 y/ |* I' S
excess photon noise 过量光子8 ~9 n0 s# ~, D
excess population 过剩粒子数8 n4 |0 C- F6 w7 c% t! z7 ]' N
excess-three-code 余三代码
8 X3 K: G' U; ~$ O Kexchange 交换器0 Y* O, k2 Q# j- O
exchange-coupled ion pair 交换耦合离子对7 o2 F/ |% h+ ?- v/ j6 L+ ?
Excicon 固态+ P( j' W/ V! v* z# @
X 射线变像管/ t6 u5 ^0 a7 b" P' E
excimer 准分子雷射/ h$ r; K1 j5 l' E( w) H
excimer laser 激元激光器, n7 Y4 K4 N& y
excimer laser medical systems 准分子雷射医疗系统7 y8 _& n) y" [0 {6 H6 p/ A/ t
excimer laser processing equipment for chemical vapor deposition (CVD)准分子雷
6 a8 L6 q) Y# Y- ]* D* c9 g& d" Zexcimer laser processing equipment for wafer stepper 准分子雷射(缩小投影曝光设
4 F/ N/ O# K0 U! q9 V( Qexcimer laser procossing equipment for micromaching 准分子雷射加工机(微机电& Y/ w1 @9 j1 x6 a$ e
excimer lasers 准分子雷射" X5 @2 U+ m; N/ D: l
exciplex 复合受激态www.Examw.com
$ b7 g U5 H0 g( b3 D+ r& c5 Hexciplex dye laser 复合受激态染料激光器
5 }0 Y4 ~. T1 M; L6 D: F+ \excircle 外圆. X8 p$ r7 ]6 y/ B
excitabiltiy 可激发性8 j- r$ a/ L" Y! n- }5 R! Q
excitatino level 激发级5 q a. z4 C% H, t) \# u
excitation 激发，激励8 I4 |6 l+ u% _! t9 Q T
excitation cross-section 激发截面! C' D& {+ m! D0 w+ M1 G6 h" ]7 n E
excitation curve 激发曲线
5 ?+ m( J+ A5 h* e) texcitation electron 激发电子
u7 V8 R! F2 bexcitation energy transfer 激发传递
" h5 b/ u! R8 ?' ]9 Jexcitation frequency 激发频率 |
发表于 2012-8-14 22:56:05
